Infineon Technologies AGBSB056N10NN3GXUMA1MOSFETs
BSB056N10NN3GXUMA1 Infineon Technologies AG Transistors MOSFETs N-CH 100V 9A Automotive 7-Pin WDSON T/R - arrowelectronics.com.au
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | Unknown |
| PPAP | Unknown |
| Power MOSFET | |
| Single Dual Drain Dual Source | |
| OptiMOS | |
| Enhancement | |
| N | |
| 1 | |
| 100 | |
| 20 | |
| 9 | |
| 5.6@10V | |
| 56@10V | |
| 56 | |
| 4100@50V | |
| 2800 | |
| 8 | |
| 9 | |
| 25 | |
| 15 | |
| -40 | |
| 150 | |
| Tape and Reel | |
| 9 (Ta)|83 (Tc) | |
| 6|10 | |
| Mounting | Surface Mount |
| Package Height | 0.52 |
| Package Width | 4.93 |
| Package Length | 5.5 |
| PCB changed | 7 |
| Standard Package Name | SON |
| Supplier Package | WDSON |
| 7 | |
| Lead Shape | No Lead |
This BSB056N10NN3GXUMA1 power MOSFET from Infineon Technologies can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 2800 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This device is made with optimos technology. This MOSFET transistor has a minimum operating temperature of -40 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
Still looking for the parts you need?
Search the world’s largest electronic component marketplace at Verical.com, with millions of hard-to-find parts available.
